In the field of semiconductor physics modeling, charge carrier transport is the starring phenomenon that needs to be predicted in order to build a mathematical model, based on higher-level quantities (e.g. electric current and voltage), that can be practically used for device simulation. Charge carrier transport is generally described by a drift-diffusion model. This yields a system of coupled partial differential equations which can be solved at two levels: (1) quasistatic approximation: the external force applied to the crystal is electrostatic, and drift-diffusion equations are coupled to a Poisson equation for the electrostatic potential. The goal is to determine the spatial distribution of carrier concentrations and the electric field (deduced from the potential); (2) fullwave model: the crystal is subject to an applied electromagnetic field, and Maxwell equations are coupled with transport equations for carrier dynamics. The goal is to determine the space-time evolution of carrier concentrations and the electromagnetic field. The quasistatic approximation is rigorous when the steady state of the semiconductor has to be calculated. For example, this could be a preliminary step to the fullwave simulation of a device that is biased prior to responding to a (time-varying) electromagnetic excitation. The fullwave model is particularly relevant to electro-optics, i.e. when light-matter interaction is investigated. Indeed, such study is essential to understanding and accurately modeling the operation of photonic devices for light generation, modulation, absorption. With Stéphane Descombes and in the context of the PhD of Massimiliano Montone we have a designed a DGTD method for solving the coupled system of Maxwell equations and drift-diffusion equations in the fullwave setting. The method has been formulated in the general three-dimensional case, and a computer implementation has been realized in a two-dimensional setting.